Title of article :
Thermoluminescence of N-carbazolyl-substituted polysilanes
Author/Authors :
G?owacki، نويسنده , , I and Dobruchowska، نويسنده , , E and Ula?ski، نويسنده , , J، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2000
Pages :
4
From page :
139
To page :
142
Abstract :
The thermoluminescence (TL) studies of photoconducting N-carbazolyl-substituted silane co- and homopolymers carried out in 15–325 K temperature range after photoexcitation at 15 K are reported. Spectral analyses of the isothermal phosphorescence and of the TL at different temperatures are discussed and compared with the analogous results for poly(N-vinylcarbazole). It was found, that the N-carbazolyl side-groups introduce to polysilanes form new photogeneration/recombination centres and they act also as trapping sites. Higher density of N-carbazolyl groups results in increasing population of deep traps. It is concluded that monomeric mechanism of luminescence dominates at low temperatures and excimeric mechanism dominates at higher temperatures.
Keywords :
N-Carbazolyl , trapping , THERMOLUMINESCENCE , Radiative recombination , polysilanes
Journal title :
Synthetic Metals
Serial Year :
2000
Journal title :
Synthetic Metals
Record number :
2073503
Link To Document :
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