• Title of article

    Dynamic Monte Carlo simulation of organic molecular beam deposition: influence of growth parameters on film morphology

  • Author/Authors

    Stephan، نويسنده , , J and Brehmer، نويسنده , , L، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2000
  • Pages
    4
  • From page
    333
  • To page
    336
  • Abstract
    Using a dynamical Monte Carlo (MC) simulation technique, we describe the growth of physisorbed organic molecules on a clean substrate under ultra-high vacuum conditions in terms of a simple lattice gas model. Our main processes under consideration are deposition and diffusion. We clarify the experimentally observed influence of deposition rate changes on film morphology and suggest that the source temperature is a better parameter to describe the growth process. Interlayer processes are decisive when molecules possess permanent dipole moments. They lead to varying barrier heights and can be utilised to control the film morphology with lateral electrical fields in situ. This effect is discussed as well.
  • Keywords
    Ehrlich–Schwoebel-barrier , Monte Carlo simulation , Lattice gas model , Organic MBE
  • Journal title
    Synthetic Metals
  • Serial Year
    2000
  • Journal title
    Synthetic Metals
  • Record number

    2073544