Title of article
Dynamic Monte Carlo simulation of organic molecular beam deposition: influence of growth parameters on film morphology
Author/Authors
Stephan، نويسنده , , J and Brehmer، نويسنده , , L، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2000
Pages
4
From page
333
To page
336
Abstract
Using a dynamical Monte Carlo (MC) simulation technique, we describe the growth of physisorbed organic molecules on a clean substrate under ultra-high vacuum conditions in terms of a simple lattice gas model. Our main processes under consideration are deposition and diffusion. We clarify the experimentally observed influence of deposition rate changes on film morphology and suggest that the source temperature is a better parameter to describe the growth process. Interlayer processes are decisive when molecules possess permanent dipole moments. They lead to varying barrier heights and can be utilised to control the film morphology with lateral electrical fields in situ. This effect is discussed as well.
Keywords
Ehrlich–Schwoebel-barrier , Monte Carlo simulation , Lattice gas model , Organic MBE
Journal title
Synthetic Metals
Serial Year
2000
Journal title
Synthetic Metals
Record number
2073544
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