Title of article :
Dynamic Monte Carlo simulation of organic molecular beam deposition: influence of growth parameters on film morphology
Author/Authors :
Stephan، نويسنده , , J and Brehmer، نويسنده , , L، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2000
Pages :
4
From page :
333
To page :
336
Abstract :
Using a dynamical Monte Carlo (MC) simulation technique, we describe the growth of physisorbed organic molecules on a clean substrate under ultra-high vacuum conditions in terms of a simple lattice gas model. Our main processes under consideration are deposition and diffusion. We clarify the experimentally observed influence of deposition rate changes on film morphology and suggest that the source temperature is a better parameter to describe the growth process. Interlayer processes are decisive when molecules possess permanent dipole moments. They lead to varying barrier heights and can be utilised to control the film morphology with lateral electrical fields in situ. This effect is discussed as well.
Keywords :
Ehrlich–Schwoebel-barrier , Monte Carlo simulation , Lattice gas model , Organic MBE
Journal title :
Synthetic Metals
Serial Year :
2000
Journal title :
Synthetic Metals
Record number :
2073544
Link To Document :
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