Semiconductor device model applied to electrically pulsed polymer LEDs

We present a numerical model which is capable of time-resolving the electron, hole, and exciton density distribution. To simulate a close to real device, we include effects due to the metal electrode as quenching, modified radiation rate, and enhanced output coupling. Using this model, we provide a framework for the experimental extraction of mobility values from transient light response that accounts for the diffusion-induced broadening of the carrier front.