Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

Deep level transient spectroscopy measurements have been carried out on ITO/poly(p-phenylenevinylene)/Al organic light emitting diodes that have a depletion region type Schottky barrier at the polymer/metal interface. The very long lived capacitance transients can be successfully described by the de-trapping of p-type majority carriers from a single energy trap level to a Gaussian distribution of transport states. The Gaussian width of 0.10±0.02 eV and trap depth of 0.75±0.05 eV are in excellent agreement with values measured from other unrelated experimental techniques.