Title of article :
Electronic levels in MEH-PPV
Author/Authors :
Stallinga، نويسنده , , P and Gomes، نويسنده , , H.L and Rost، نويسنده , , H and Holmes، نويسنده , , A.B and Harrison، نويسنده , , M.G and Friend، نويسنده , , R.H، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2000
Pages :
3
From page :
535
To page :
537
Abstract :
pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states.
Keywords :
Polymers , traps , DLTS , MEH-PPV
Journal title :
Synthetic Metals
Serial Year :
2000
Journal title :
Synthetic Metals
Record number :
2073701
Link To Document :
بازگشت