Title of article :
Field-effect mobilities in spin-cast and vacuum-deposited PPV-type pentamers
Author/Authors :
Geens، نويسنده , , W. and Tsamouras، نويسنده , , D. and Poortmans، نويسنده , , J. and Hadziioannou، نويسنده , , G.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2001
Abstract :
Field-effect transistors (FET) have been fabricated to determine the hole mobility of spin-cast films of the five-ring PPV-type oligomer 2,5-di-n-octyloxy-1,4-bis((4′,4″-bisstyryl)styrylbenzene) (Ooct-OPV5). The influence of annealing of the organic layer
Keywords :
Field-effect transistor , organic semiconductor , Mobility , Spin-casting , Vacuum deposition
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
