Title of article :
Molecular analogue memory cell based on electrical switching and memory in molecular thin films
Author/Authors :
Krieger، نويسنده , , Ju.H. and Trubin، نويسنده , , S.V. and Vaschenko، نويسنده , , S.B. and Yudanov، نويسنده , , N.F.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2001
Pages :
4
From page :
199
To page :
202
Abstract :
The structure of a molecular memory cell with its work based on the phenomenon of structural instability of one-dimensional conductive molecular systems is offered. Electrophysical parameters of the molecular analogue memory cell were investigated. It was
Keywords :
Thin films , memory , switching
Journal title :
Synthetic Metals
Serial Year :
2001
Journal title :
Synthetic Metals
Record number :
2075057
Link To Document :
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