Title of article :
Properties and crystal structure of perfluoro-α-sexithiophene
Author/Authors :
Sakamoto، نويسنده , , Y and Komatsu، نويسنده , , S and Suzuki، نويسنده , , T، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2003
Pages :
3
From page :
361
To page :
363
Abstract :
Absorption and emission spectra, differential pulse voltammetry (DPV), and X-ray crystal structure of perfluoro-α-sexithiophene (PF-6T) are described. Emission maxima of PF-6T were observed at 594 nm in solid state and at 471 nm in CHCl3. The DPV of PF-6T showed two reduction peaks at −1.86 and −2.05 V, which shifted positively relative to those of α-sexithiophene (6T). The electrochemically determined energy gap (2.81 eV) is in agreement with that measured from the absorption spectrum in solution (2.64 eV). The crystal structure of PF-6T showed all-trans and coplanar conformation with a π–π stacking feature including face-to-face molecules, suggesting the possibility of the efficient electron transport along the π–π stacking direction.
Keywords :
Perfluoro-?-sexithiophene , organic semiconductor , Field-effect transistor
Journal title :
Synthetic Metals
Serial Year :
2003
Journal title :
Synthetic Metals
Record number :
2077189
Link To Document :
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