Title of article :
The influence of bulk traps on the subthreshold characteristics of an organic field effect transistor
Author/Authors :
Scheinert، نويسنده , , S. and Paasch، نويسنده , , G. and Doll، نويسنده , , T.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2003
Abstract :
The subthreshold characteristics of fabricated organic field effect transistors based on regioregular poly(3-dodecylthiophene) (P3DDT) as the active layer and poly-4-vinylphenol (P4VP) as the gate insulator have been investigated. The transistor turn-on o
Keywords :
conjugated polymer , Deep trap , Organic field effect transistor
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
