Title of article :
Analyzes of field effect devices based on poly(3-octylthiophene)
Author/Authors :
Scheinert، نويسنده , , S. and Schliefke، نويسنده , , W.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2003
Abstract :
Poly(3-octylthiophene) (P3OT) based MOS capacitors and transistors have been prepared. The spin-coated P3OT-layers have been investigated by ellipsometry. The measured index of refraction and the gap energy are n=1.8 and EG=2 eV, respectively. The layer t
Keywords :
conjugated polymer , Organic field effect transistor , Deep trap
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
