Title of article
Analyzes of field effect devices based on poly(3-octylthiophene)
Author/Authors
Scheinert، نويسنده , , S. and Schliefke، نويسنده , , W.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2003
Pages
9
From page
501
To page
509
Abstract
Poly(3-octylthiophene) (P3OT) based MOS capacitors and transistors have been prepared. The spin-coated P3OT-layers have been investigated by ellipsometry. The measured index of refraction and the gap energy are n=1.8 and EG=2 eV, respectively. The layer t
Keywords
conjugated polymer , Organic field effect transistor , Deep trap
Journal title
Synthetic Metals
Serial Year
2003
Journal title
Synthetic Metals
Record number
2079368
Link To Document