Title of article :
Photoimpedance spectroscopy of poly(3-hexyl thiophene) metal–insulator–semiconductor diodes
Author/Authors :
Meijer، نويسنده , , E.J. and Mangnus، نويسنده , , A.V.G. and Huisman، نويسنده , , B.-H. and ‘t Hooft، نويسنده , , G.W. and de Leeuw، نويسنده , , D.M. and Klapwijk، نويسنده , , T.M.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2004
Pages :
4
From page :
53
To page :
56
Abstract :
Capacitance–voltage (C–V) characteristics of metal–insulator–semiconductor (MIS) diodes with poly(3-hexylthiophene) (P3HT) as p-type semiconductor were investigated as function of time, ambient, and illumination. P3HT is only stable under illumination wit
Keywords :
Photoimpedance spectroscopy , Poly(3-hexyl thiophene) , Diodes
Journal title :
Synthetic Metals
Serial Year :
2004
Journal title :
Synthetic Metals
Record number :
2080092
Link To Document :
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