Title of article :
The Schottky barrier height of the rectifying Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Sn/pyronine-B/p-Si and Al/pyronine-B/p-Si contacts
Author/Authors :
اakar، نويسنده , , M. and Temirci، نويسنده , , C. and Türüt، نويسنده , , A.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2004
Abstract :
The Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky structures have been obtained by sublimation of the organic compound pyronine-B onto the top of p-Si surface. Our goal is to experimentally investigate whether
Keywords :
Schottky barrier , Metal–interfacial layer–semiconductor contacts , Pyronine-B , Organic–inorganic semiconductor contact
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
