Title of article :
Organic field-effect transistors with ultrathin gate insulator
Author/Authors :
Majewski، نويسنده , , L.A and Schroeder، نويسنده , , R and Grell، نويسنده , , M، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2004
Abstract :
We have used a commercially available Mylar film coated with a thin (≈60 nm) layer of aluminium and an ultrathin (≈3.5 nm) SiO2 layer as flexible substrate for the manufacture of bottom-gate organic field-effect transistors (OFETs). We show that the SiO2
Keywords :
rrP3HT , Aluminium , SiO2 , OFET , Operating voltage , High capacitance
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
