• Title of article

    Organic field-effect transistors with ultrathin gate insulator

  • Author/Authors

    Majewski، نويسنده , , L.A and Schroeder، نويسنده , , R and Grell، نويسنده , , M، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2004
  • Pages
    4
  • From page
    97
  • To page
    100
  • Abstract
    We have used a commercially available Mylar film coated with a thin (≈60 nm) layer of aluminium and an ultrathin (≈3.5 nm) SiO2 layer as flexible substrate for the manufacture of bottom-gate organic field-effect transistors (OFETs). We show that the SiO2
  • Keywords
    rrP3HT , Aluminium , SiO2 , OFET , Operating voltage , High capacitance
  • Journal title
    Synthetic Metals
  • Serial Year
    2004
  • Journal title
    Synthetic Metals
  • Record number

    2080441

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2080441