Title of article
Fabrication of regioregular poly(3-hexylthiophene) field-effect transistors by dip-coating
Author/Authors
Wang، نويسنده , , Guangming and Hirasa، نويسنده , , Takashi and Moses، نويسنده , , Daniel and Heeger، نويسنده , , Alan J.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2004
Pages
6
From page
127
To page
132
Abstract
We report the influence of dip-coating speed and concentration of the polymer solution on the characteristics of field-effect transistors (FETs) fabricated in the bottom-contact structure with regioregular poly(3-hexylthiophene) (RR-P3HT) as the active se
Keywords
Field-effect transistors (FETs) , dip-coating , Regioregular poly(3-hexylthiophene) (RR-P3HT) , AFM Images
Journal title
Synthetic Metals
Serial Year
2004
Journal title
Synthetic Metals
Record number
2080783
Link To Document