Title of article
Low band gap donor–acceptor–donor polymers for infra-red electroluminescence and transistors
Author/Authors
Chen، نويسنده , , M.X. and Perzon، نويسنده , , E. and Robisson، نويسنده , , N. and Jِnsson، نويسنده , , S.K.M. and Andersson، نويسنده , , M.R. and Fahlman، نويسنده , , M. and Berggren، نويسنده , , M.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2004
Pages
4
From page
233
To page
236
Abstract
We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor–acceptor–donor (D–A–D) units. The D–A–D segment includes two electron-donating thiophene rings combine
Keywords
Band gap , Polymers , Infra-red electroluminescence
Journal title
Synthetic Metals
Serial Year
2004
Journal title
Synthetic Metals
Record number
2080850
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