Author/Authors :
Kalb، نويسنده , , Wolfgang and Lang، نويسنده , , Philippe and Mottaghi، نويسنده , , Mohamad and Aubin، نويسنده , , Hervé and Horowitz، نويسنده , , Gilles and Wuttig، نويسنده , , Matthias، نويسنده ,
Abstract :
Pentacene based field-effect transistors were fabricated with alumina as the gate insulator. In some of the devices, the alumina surface was modified with a fatty acid self-assembled monolayer (SAM). Atomic force microscopy (AFM) shows that the growth of
