Title of article
Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator
Author/Authors
Kang، نويسنده , , S.J. and Chung، نويسنده , , K.B. and Park، نويسنده , , D.S and Kim، نويسنده , , H.J. and Choi، نويسنده , , Y.K. and Jang، نويسنده , , M.H. and Noh، نويسنده , , M. and Whang، نويسنده , , C.N.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2004
Pages
4
From page
351
To page
354
Abstract
Pentacene thin film transistors (TFTs) on a high-κ Gd2O3 gate insulator layer were fabricated and characterized. The Gd2O3 layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured
Journal title
Synthetic Metals
Serial Year
2004
Journal title
Synthetic Metals
Record number
2080944
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