Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric
Author/Authors :
Puigdollers، نويسنده , , J. and Voz، نويسنده , , C. and Martيn، نويسنده , , I. and Vetter، نويسنده , , M. and Orpella، نويسنده , , A. and Alcubilla، نويسنده , , R.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2004
Pages :
4
From page :
355
To page :
358
Abstract :
Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) baked at only 170 °C. Crystalline
