Title of article :
Nucleation and growth of ultrathin pentacene films on silicon dioxide: effect of deposition rate and substrate temperature
Author/Authors :
Pratontep، نويسنده , , Sirapat and Brinkmann، نويسنده , , Martin and Nüesch، نويسنده , , Frank and Zuppiroli، نويسنده , , Libero، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2004
Pages :
5
From page :
387
To page :
391
Abstract :
We report on a study of pentacene thin-films grown by high vacuum deposition on silicon dioxide, using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The nucleation density of pentacene islands on SiO2 is found to rise as the de
Keywords :
atomic force microscopy , Transmission electron microscopy , organic semiconductors
Journal title :
Synthetic Metals
Serial Year :
2004
Journal title :
Synthetic Metals
Record number :
2080976
Link To Document :
بازگشت