The effects of the temperature on current–voltage characteristics of Sn/polypyrrole/n-Si structures
Author/Authors :
Aydo?an، نويسنده , , ?. and Sa?lam، نويسنده , , M. and Türüt، نويسنده , , A. and Onganer، نويسنده , , Y.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2005
Pages :
6
From page :
15
To page :
20
Abstract :
Sn/polypyrrole (PPy)/n-Si structure has been fabricated and the I–V characteristics of the structure have been measured in the temperature range 90–300 K. It is shown that the PPy is a good rectifying contact on the n-Si semiconductor. The analysis of I–V
Keywords :
Sn/PPy/n-Si , Semiconductor , Gaussian distribution
