Title of article :
Polymer FET with a conducting channel
Author/Authors :
Ashizawa، نويسنده , , S. and Shinohara، نويسنده , , Y. and Shindo، نويسنده , , H. and Watanabe، نويسنده , , Y. and Okuzaki، نويسنده , , H.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2005
Abstract :
Metal-insulator-semiconductor field effect transistor (MISFET) using poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) as an active channel was fabricated by multiple line patterning, one of the most simple, rapid, and inexpensive metho
Keywords :
metal/insulator interfaces , Schottky barrier , Metal/semiconductor interfaces , Polythiophenc and derivatives
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
