• Title of article

    The effects of surface treatment on device performance in pentacene-based thin film transistor

  • Author/Authors

    Koo، نويسنده , , Jae Bon and Kim، نويسنده , , Seong Hyun and Lee، نويسنده , , Jung Hun and Ku، نويسنده , , Chan Hoe and Lim، نويسنده , , Sang Chul and Zyung، نويسنده , , Taehyoung، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2006
  • Pages
    5
  • From page
    99
  • To page
    103
  • Abstract
    We report on the influence of surface treatment using hexamethyldisilazane (HMDS) on device performance of pentacene-based thin film transistor. The samples with surface treatment using HMDS show higher mobility, lower subthreshold slope, and lower off-current compared to the untreated samples. We have also investigated the effect of various coating methods of HMDS on device performance. In the case of post-baked samples after spin coating, the improvements of mobility and on-current are larger than those of spin-coated samples. Especially a dip-coated sample has threshold voltage of −4.11 V and turn-on voltage of −0.03 V, showing the enhancement mode characteristics, which is useful for the operation as a circuit and a switch device for active-matrix displays. However, the mobility of dip-coated sample is one order lower than that of spin-coated sample, and hysteresis is larger than that of spin-coated sample.
  • Keywords
    HMDs , Organic thin film transistor , threshold voltage , Mobility , pentacene
  • Journal title
    Synthetic Metals
  • Serial Year
    2006
  • Journal title
    Synthetic Metals
  • Record number

    2082992