Title of article :
Dedoping of organic semiconductors
Author/Authors :
Russell، نويسنده , , D.M. and Kugler، نويسنده , , T. and Newsome، نويسنده , , C.J and Li، نويسنده , , S.P. and Ishida، نويسنده , , M. and Shimoda، نويسنده , , T.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2006
Pages :
4
From page :
769
To page :
772
Abstract :
An effective dedoping method for organic semiconductors using tetrakisdimethylaminoethylene (TDAE) was demonstrated using poly(3-hexylthiophene) thin film transistors in top gate configuration. Devices were treated after production and showed improved on/off ratios of up to 105 with little change in the field effect mobility.
Keywords :
organic semiconductors , Dedoping , TDAE , Transistors
Journal title :
Synthetic Metals
Serial Year :
2006
Journal title :
Synthetic Metals
Record number :
2083353
Link To Document :
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