The calculation of electronic parameters of an Ag/chitin/n-Si Schottky barrier diode

We have formed polymeric organic compound chitin film on n-Si substrate by adding a solution of polymeric compound chitin in N,N-dimethylacetamide and lithium chloride on top of an n-Si substrate and then evaporating solvent. It has been seen that the chitin/n-Si contact has demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current–voltage (I–V) curves studied at room temperature. The barrier height and ideality factor values of 0.959 eV and 1.553, respectively, for this structure have been obtained from the forward bias I–V characteristics. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitin/n-Si substrate in the energy range from (Ec − 0.897) to (Ec − 0.574) eV have been determined from the I–V characteristics. The interface state density, Nss, ranges from 5.965 × 1012 cm−2 eV−1 in (Ec − 0.897) eV to 1.706 × 1013 cm−2 eV−1 in (Ec − 0.574) eV and has an exponential rise with bias this energy range.