Title of article :
Charge transport across organic–organic interfaces in organic light-emitting diodes
Author/Authors :
H Houili، نويسنده , , H. and Tuti?، نويسنده , , E. and Zuppiroli، نويسنده , , L.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2006
Pages :
6
From page :
1256
To page :
1261
Abstract :
The process of hopping transport across organic heterojunctions is critical to the function of organic light-emitting diodes (OLED) and many other currently developed organic electronic devices. We consider the case of a hole-only or homopolar heterojunction with Gaussian energetic disorder. We cross-compare the results of our previous multiparticle Monte Carlo simulator to results of the pioneering analytic hopping model of Arkhipov et al. [V.I. Arkhipov, E.V. Emelianova, H. Bنssler, J. Appl. Phys. 90 (2001) 2352]. This comparison made it possible to point out and correct some shortcomings of the latter model. This includes the new definition of the injection level at the heterojunction, which brings orders of magnitude change to the current with respect to values obtained for previously used injection levels. Further insight, related to the backward-to-forward hopping ratio at the heterojunction, also brings about the order of magnitude correction for the current. We end up with a rather complete and cross-verified analytical description of the charge transport across energetically disordered homopolar heterojunctions.
Keywords :
organic light-emitting diodes , Dielectric interface , Hopping transport , Energetic disorder , organic semiconductors
Journal title :
Synthetic Metals
Serial Year :
2006
Journal title :
Synthetic Metals
Record number :
2083631
Link To Document :
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