Title of article :
Current–voltage characteristics of an organic diode: Revisited
Author/Authors :
Kumar، نويسنده , , Pankaj K. Jain، نويسنده , , S.C. and Kumar، نويسنده , , Vikram and Misra، نويسنده , , Aparna and Chand، نويسنده , , Suresh and Kamalasanan، نويسنده , , M.N.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2007
Abstract :
For over 40 years the current–voltage (J–V) characteristics of an organic diode with exponentially distributed traps have been interpreted using the equation J ∝ Vm, where m > 2. This equation is based on the classical work of Helfrich and Mark (W. Helfrich, P. Mark, Z. Phys. 168 (1962) 495). It is based on the assumption that the injection barrier is zero. However, the recent results show that in many cases the Schottky barrier is not zero and modification in this equation is necessary. We present a mathematical simulation, taking into account the effect of non-zero Schottky barrier. The experiments show good agreement with the simulated results.
Keywords :
P3HT , charge transport , Exponential traps
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals