Title of article
Control of device characteristics of ambipolar organic field-effect transistors using the hydroxyl in organic insulator
Author/Authors
Kawaguchi، نويسنده , , Hideyuki and Taniguchi، نويسنده , , Masateru and Kawai، نويسنده , , Tomoji، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2008
Pages
4
From page
355
To page
358
Abstract
Using poly(vinylalcohol) with hydroxyl and poly(cyanoethylacrylate) without hydroxyl for the gate-insulating layer, we studied the influence of the hydroxyl on the device characteristics of ambipolar organic field-effect transistors (OFET) with copper–phthalocyanine used for the organic semiconductor. More than 10-fold higher mobility and a large threshold voltage were observed in the OFET with poly(cyanoethylacrylate). The ratio of the hole mobility and electron mobility of the ambipolar transistor with poly(vinylalcohol) was two times of that of the ambipolar transistor with poly(cyanoethylacrylate). The presence of the hydroxyl in the gate-insulating layer can control device characteristics of ambipolar OFETs.
Keywords
organic field-effect transistors , Ambipolar , Poly(cyanoethylacrylate)
Journal title
Synthetic Metals
Serial Year
2008
Journal title
Synthetic Metals
Record number
2084487
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