Perylenetetracarboxylic di-imide-based bottom-contact devices: A study on two kinds of source/drain electrodes, ITO and MoW

High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis(4-trifluoromethoxybenzyl)-perylene-3,4,9,10-tetracarboxylic di-imide, were fabricated, and the effects of crystal packing on indium tin oxide and molybdenum–tungsten alloy were shown in two different electric characteristics. The estimated work function of indium tin oxide and molybdenum–tungsten alloy were 4.7 and 5.0 eV. The calculated lowest unoccupied molecular orbital energy level of the organic material was 3.7 eV. Transistors with indium tin oxide bottom electrodes exhibited a high mobility of 3.37 × 10−2 cm2 V−1 s−1, an on/off current ratio of 6.5 × 105 and threshold voltage of −4.0 V.