Title of article :
The effects of hydroxyl-free polystyrene buffer layer on electrical performance of pentacene-based thin-film transistors with high-k oxide gate dielectric
Author/Authors :
Yu، نويسنده , , Aifang and Qi، نويسنده , , Qiong and Jiang، نويسنده , , Peng and Jiang، نويسنده , , Chao، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2009
Pages :
4
From page :
1467
To page :
1470
Abstract :
We have investigated the effects of hydroxyl-free polystyrene (PS) as buffer layer on pentacene-based low-voltage organic thin-film transistors (OTFTs). The PS buffer layer is formed on the HfO2 layer evaporated on Si substrate by spin-coating method prior to pentacene deposition, existence of which results in a dramatic increase of field effect mobility from 0.09 to 0.59 cm2/Vs and negligible hysteresis. The improved mobility and hysteresis of the OTFTs can be attributed to the formation of smooth and nonpolar hydroxyl-free PS/HfO2 gate dielectric surface. The PS insulator buffer layer can also effectively reduce gate leakage current by more than 70%. The results demonstrate that using appropriate polymer buffer layer is favorable to improve the performance of the OTFTs operating at low voltages with high mobility and good electrical stability.
Keywords :
Polystyrene buffer layer , Field effect mobility , Gate leakage current , HfO2 , Pentacene-based thin-film transistors , hysteresis
Journal title :
Synthetic Metals
Serial Year :
2009
Journal title :
Synthetic Metals
Record number :
2085483
Link To Document :
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