Author/Authors :
Yook، نويسنده , , Kyoung Soo and Jeon، نويسنده , , Soon Ok and Joo، نويسنده , , Chul Woong and Lee، نويسنده , , Jun-Yeob and Lee، نويسنده , , Tae-Woo and Noh، نويسنده , , Taeyong and Yang، نويسنده , , Haa-Jin and Kang، نويسنده , , Sung-Kee، نويسنده ,
Abstract :
N doped organic light-emitting diodes were developed by using Li3N as a n type dopant in electron transport layer. Driving voltage was greatly lowered by using Li3N doped electron transport layer and combination of MoO3 doped hole transport layer with Li3N doped electron transport layer gave high quantum efficiency of 15% and low driving voltage of 4 V at 1000 cd/m2 in green phosphorescent organic light-emitting diodes. Decomposition of Li3N during evaporation into Li and N2 was found to be responsible for n doping effect of Li3N.
Keywords :
high efficiency , Low driving voltage , N doping , LiN3
