Using the copper selenide as hole injector electrode in MeH-PPV polymer light emitting diodes

This work addresses the electrical characterization of the junction copper selenide (Cu2−xSe) and poly-[2-metoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MeH-PPV). The Cu2−xSe film was produced on copper (Cu) substrate using the chemical bath deposition technique. The polymer light emitting diodes were processed using the following layers: Cu/Cu2−xSe or ITO (indium tin oxide), MeH-PPV and aluminum (Al). The barrier height (ϕ) of Cu/Cu2−xSe/MeH-PPV was estimated using the Fowler–Nordheim field-emission tunneling theory. We observed that ϕ decreases from 180 meV, for conventional ITO/MeH-PPV/Al device, to 10 meV for Cu/Cu2−xSe/MeH-PPV/al diode.