Title of article :
Recent advances in organic spin-valve devices
Author/Authors :
Wang، نويسنده , , Fujian and Vardeny، نويسنده , , Z. Valy and Heeger، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2010
Pages :
6
From page :
210
To page :
215
Abstract :
Organic Spintronics has been considered to be the physics and applications of spin polarized electron injection, transport, manipulation and detection in organic diodes by the application of an external magnetic field. The prototype device is the organic spin-valve (OSV), which is based on an organic semiconductor spacer placed in between two ferromagnetic electrodes having different coercive fields, of which magnetoresistance changes with the applied field. Immense progress has been achieved in the past few years in fabricating, studying and understanding the underlying physics of these devices. We highlight the most significant advance in OSV research at the University of Utah, including the magnetoresistance response temperature and bias voltage dependencies; and show significant room temperature operation using LSMO/C60/Co structure. We also report positive OSV-related magnetoresistance at low temperature, which was achieved using LSMO/polymer/Co OSV structure, where the polymer is a poly[phenylene-vinylene] derivative.
Keywords :
Organic spintronics , Organic spin-valve , Spin polarized carrier injection , magnetoresistance
Journal title :
Synthetic Metals
Serial Year :
2010
Journal title :
Synthetic Metals
Record number :
2086699
Link To Document :
بازگشت