Title of article :
High field linear magnetoresistance in fully spin-polarized high-temperature organic-based ferrimagnetic semiconductor V(TCNE)x films, x 2
Author/Authors :
Raju، نويسنده , , N.P. and Prigodin، نويسنده , , V.N and Pokhodnya، نويسنده , , K.I. and Miller، نويسنده , , Joel S. and Epstein، نويسنده , , A.J.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2010
Pages :
4
From page :
307
To page :
310
Abstract :
Positive magnetoresistance (MR) has been observed to increase linearly up to 32 T in the magnetically ordered state of organic-based ferrimagnetic semiconductor V(TCNE)x films (x ∼ 2; TCNE = tetracyanoethylene) with T c above room temperature ( > 350 K). In this material conductivity takes place via electrons activated from 3d level of V2+ to upper π * subband of [TCNE] − . We show an unusual MR behavior without any sign of saturation up to a magnetic field of 32 T. For temperatures less than T c MR exhibits a linear behavior in the entire field range and above T c it has a quadratic dependence at low fields. Temperature and field dependent behaviors of MR in this material are explained on the basis of spin polarizations in V2+ 3d level and the upper π * subband of [TCNE] − formed by Coulomb repulsion.
Keywords :
Organic magnets , spin polarization , magnetoresistance , spintronics
Journal title :
Synthetic Metals
Serial Year :
2010
Journal title :
Synthetic Metals
Record number :
2086769
Link To Document :
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