Author/Authors :
Zhang، نويسنده , , Xiao-Wen and Li، نويسنده , , Jun and Zhang، نويسنده , , Liang and Lin، نويسنده , , Huaping and Jiang، نويسنده , , Xue-Yin and Zhu، نويسنده , , Wen-Qing and Zhang، نويسنده , , Zhi-Lin، نويسنده ,
Abstract :
Highly efficient Si-based top-emitting organic light-emitting device (TOLED) using MoOx buffer layer is demonstrated. With tris(8-hydroquinoline) aluminum as emitting and electron-transport layer, the p-Si/MoOx based TOLED shows a maximum luminous efficiency of 1.1 cd/A and a power efficiency of 0.68 lm/W, which are almost double those (0.64 cd/A and 0.34 lm/W) of p-Si/SiO2 based TOLED. Moreover, in comparison with the widely used thermally grown SiO2 buffer layer, MoOx can be deposited by conventional evaporation technology and thereby simplifying fabrication process.
Keywords :
Work function , Buffer layer , OLED , SI , Top-emitting
