Author/Authors :
Gaur، نويسنده , , Manoj and Lohani، نويسنده , , Jaya and Raman، نويسنده , , R. and Balakrishnan، نويسنده , , V.R. and Raghunathan، نويسنده , , P. and Eswaran، نويسنده , , S.V.، نويسنده ,
Abstract :
Diode devices (glass/ITO/polymer/Al) have been fabricated using poly (3-hexylthiophene) (P3HT) crosslinked with two different biaryl crosslinkers. Crosslinking was performed by exposing the thin films with different wt% of crosslinker to UV irradiation and progress of crosslinking was monitored by IR spectroscopy. An increase in hole mobility of two orders of magnitude has been observed after crosslinking.
Keywords :
Crosslinkers , Diode devices , Bisazides , Poly (3-hexylthiophene)
