The study of new p–n mixed semiconductors: 6,13-Bis(4-propylphenyl)pentacene–ZnO nano-sized composites films

Abstracts es of 6,13-bis(4-propylphenyl)pentacene(BPP)–ZnO nano-sized composites were successfully constructed and characterized by UV–vis spectra, infrared spectra, X-ray diffraction spectra, cyclic voltammetry, X-ray photoelectric spectra, etc. These characterizations proved that an interaction between the BPP and ZnO happened, leading to the generation of p–n mixed semiconductors with many new properties. The forbidden band gaps of prepared semiconductors are among 1.09–1.29 eV, which are much smaller than that of BPP and ZnO. From the comparison of BPP–ZnO nano-sized composites with some other related composites, it was found that the forbidden band gap of p–n mixed semiconductor becomes smaller as the forbidden band gap of pentacene derivative decreases.