Title of article :
Frequency dependence of organic magnetoresistance
Author/Authors :
Wang، نويسنده , , Fujian and Rybicki، نويسنده , , James and Lin، نويسنده , , Ran and Hutchinson، نويسنده , , Kent A. and Hou، نويسنده , , Jia and Wohlgenannt، نويسنده , , Markus، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2011
Pages :
6
From page :
622
To page :
627
Abstract :
Organic magnetoresistive (OMAR) devices show a large enough magnetoresistive response (typically 10%) for potential applications as magnetic field sensors. However, applications often require sensing high frequency magnetic fields, and the examination of the frequency-dependent magnetoresistive response is therefore required. Analysis of time constants that limit the frequency response may also shed light on the mechanism behind the OMAR effect.
Keywords :
spintronics , organic semiconductors , organic , magnetoresistance , Frequency response
Journal title :
Synthetic Metals
Serial Year :
2011
Journal title :
Synthetic Metals
Record number :
2088036
Link To Document :
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