Author/Authors :
Kim، نويسنده , , Jung-Min and Lee، نويسنده , , Dong-Hoon and Jeun، نويسنده , , Jun-Ho and Yoon، نويسنده , , Tae-Sik and Lee، نويسنده , , Hyun-Ho and Lee، نويسنده , , Jong-Wook and Kim، نويسنده , , Yong-Sang، نويسنده ,
Abstract :
The use of nano-particle/polymer blend as the tunneling layer for non-volatile organic memory is an alternative to change and improve the device characteristics and performances. A non-volatile organic memory based on the pentacene semiconductor/polymethylmethacrylate (PMMA) + CdSe nano-particle blend tunneling insulator/PMMA gate insulator, is demonstrated by a simple fabrication process. We have observed the charging and discharging effect of CdSe NPs, using capacitance–voltage and current–voltage measurement. The capacitance and current change were observed by a charge transport between the pentacene semiconductor and the CdSe nano-particles. In addition, good reliability was confirmed by the retention characteristics.
