• Title of article

    Polyimide/Ta2O5 nanocomposite gate insulators for enhanced organic thin-film transistor performance

  • Author/Authors

    Chen، نويسنده , , Liang-Hsiang and Lin، نويسنده , , Pang-Yen Ho، نويسنده , , Jia-Chong and Lee، نويسنده , , Cheng-Chung and Kim، نويسنده , , Choongik and Chen، نويسنده , , Ming-Chou، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2011
  • Pages
    5
  • From page
    1527
  • To page
    1531
  • Abstract
    This study reports the preparation and characterization of polyimide/Ta2O5 nanocomposite films as insulators for organic thin-film transistors (OTFTs). The degree of imidization, thermal, electrical, and surface properties of the nanocomposite films were characterized as a function of Ta2O5 precursor contents. The nanocomposite films, with controlled/comparable insulator electrical characteristics and surface properties, have been found to enhance dielectric constant compared to pristine polyimide films, which resulted in improved pentacene TFT performance by a factor of 2–3 with carrier mobility values as high as 0.38 cm2/V s.
  • Keywords
    Organic thin-film transistors (OTFTs) , Nanocomposite , Hybrid films , Gate insulator
  • Journal title
    Synthetic Metals
  • Serial Year
    2011
  • Journal title
    Synthetic Metals
  • Record number

    2088176