Photoelectrochemical cells based on LB films of fullerene–thiophene derived dyads

Photoelectrochemical properties of fullerene with three oligothiophenes (1T-F, 2T-F, 3T-F), ethylenedioxythiophenyl (EDOT-F) and hexylthiophenyl (HXT-F) groups were investigated with the photocurrent measurements. Electron paramagnetic resonance (EPR) spectroscopy has been used for study the fullerene–thiophene derived systems in wide temperature range. For electrochemical examination of these systems Langmuir–Blodgett (LB) layers deposited on a gold substrate were prepared. The light-induced photocurrent study shows that the structure of the dyad has an influence on both photovoltage and photocurrent, although these two variables are not correlated with each other. The role of the structure of the dyads is also seen in electron paramagnetic resonance investigations. All these results supported by previous IR and UV–vis spectral studies suggest, that the photoinduced electron transfer from oligothiophenes or EDOT and HXT to C60 is a primary process of the photocurrent generation in the fullerene–thiophene-derived dyads.