Title of article :
SrTiO3 insulator for low-voltage organic field-effect transistors
Author/Authors :
Yan، نويسنده , , Hu and Okuzaki، نويسنده , , Hidenori، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2011
Pages :
6
From page :
1781
To page :
1786
Abstract :
Organic field-effect transistors (FETs) are considered to be used as high-end electronics and low-end ones. In the low-end electronics such as radio-frequency identification tags and smart-cards the devices should be battery-powered and then need to operate at a few volts. Majority of the organic FETs reported to date, however, can only operate well at a voltage as high as ∼100 V. Three kinds of approaches have been mainly proposed and studied in order to achieve low-voltage organic FETs. First one is simply using a high-k insulator to obtain certain electric capacitance at lower gate voltages. Second one is using a nanometer-thick self-assembled monolayer of organic compound as the gate dielectric. Third one is using a polymer composite containing ionic liquid. Here we briefly review typical studies using the three approaches to achieve the low-voltage organic FETs in the first part of this subject review, and then we focus on our recent progress in the low-voltage organic FETs mainly using strontium titanate as a high-k insulator in the second part.
Keywords :
pentacene , strontium titanate , High-k insulator , Field-effect transistor , organic semiconductor
Journal title :
Synthetic Metals
Serial Year :
2011
Journal title :
Synthetic Metals
Record number :
2088215
Link To Document :
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