Title of article
p-Si/DNA photoconductive diode for optical sensor applications
Author/Authors
Gupta، نويسنده , , R.K. and Yakuphanoglu، نويسنده , , F. and Hasar، نويسنده , , H. and Al-Khedhairy، نويسنده , , Abdulaziz A.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2011
Pages
6
From page
2011
To page
2016
Abstract
The junction parameters of Al/p-Si/Ag and Al/p-Si/DNA/Ag diodes were studied using current–voltage (I–V), capacitance–voltage (C–V), and capacitance–frequency (C–f) measurements. The photoresponse properties of the diodes were analyzed using transient photocurrent measurements. The photoresponse of the Al/p-Si/DNA/Ag diode is better than that of Al/p-Si/Ag diode. The ideality factor and barrier height values of the Al/p-Si/DNA/Ag diode were obtained to be 1.2 ± 0.1 and 0.56 ± 0.02 eV, respectively. The capacitance of the diodes increases with decreasing frequency which is explained by the change in the interface states. These results indicate that the p-Si/DNA junction could be used as an optical sensor.
Keywords
Photoresponse , Schottky diode , DNA , Ideality factor , Organic Material
Journal title
Synthetic Metals
Serial Year
2011
Journal title
Synthetic Metals
Record number
2088250
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