Title of article
Ferroelectric films and devices
Author/Authors
Kingon، نويسنده , , Angus I and Streiffer، نويسنده , , Stephen K، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
39
To page
44
Abstract
Recent developments in ferroelectric films have been made in terms of their application in nonvolatile memories and dynamic random access memories. One highlight is the report of a complete description of the temperature-dependent dielectric behavior of (Ba, Sr)TiO3 films as a function of strain, composition, and thickness. For the first time, a direct link has been made between the thin film and bulk electrical properties.
Journal title
Current Opinion in Solid State and Materials Science
Serial Year
1999
Journal title
Current Opinion in Solid State and Materials Science
Record number
2088490
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