Author/Authors :
Ahmed، نويسنده , , Rizwan and Sams، نويسنده , , Michael and Simbrunner، نويسنده , , Clemens and Ullah، نويسنده , , Mujeeb and Rehman، نويسنده , , Kamila and Schwabegger، نويسنده , , Günther and Sitter، نويسنده , , H. and Ostermann، نويسنده , , Timm، نويسنده ,
Abstract :
A comprehensive study concerning the reproducibility and stability of organic n-type field effect transistors is presented. C60 based OFETs were chosen to investigate the fabrication reproducibility and the long term stability because C60 is a high mobility n-type material. We fabricated 48 transistors and each transistor was measured for 24 h inside the glove box. To test for life time stability – long term measurements up to three months have been undertaken. We report about the fluctuations in the device parameters of all investigated transistors by comparing the transfer characteristics, and on/off ratio for short time and long time measurements. C60 based OFETs showed good reproducibility and stability for short time measurements and a decay for long time measurements.
Keywords :
Reproducibility and stability of OFET , C60 , n-Type OFET , Long time measurement