Analysis of dark and photovoltaic characteristics of Au/Pyronine G(Y)/p-Si/Al heterojunction

Thin films of Pyronine G(Y), PYR (G) were prepared on single crystalline p-Si by thermal evaporation technique. The temperature-dependence of the electrical characteristics of the Au/PYR (G)/p-Si/Al heterojunction diode in the temperature range of 300–400 K was studied. The barrier height and ideality factor of the device were determined as a function of temperature. It is noticed that the bias barrier height Φb increases and the ideality factor n decreases by increasing the temperature. Such behavior can be attributed to barrier inhomogeneities by assuming a high mismatch in PYR(G)/p-Si interface. The value of series resistance (Rs) was determined using Cheungʹs method and found to be a strongly temperature dependent. The variation of 1/C2 with voltage shows a straight line at high frequency (1 MHz) indicating the formation of barrier between PYR(G) and p-Si and the potential barrier height is about 0.92 eV at 300 K. The photovoltaic properties of Au/PYR(G)/p-Si/Al heterojunction were investigated under illumination with light intensity of 10 mW/cm2. Discussion of the obtained results and their comparison with the previous published data were also given.