Atomic structure of point defects in compound semiconductor surfaces

The present work reviews the progress in the determination and understanding of the atomic structure of point defects and dopant atoms exposed in and below cleavage surfaces of III–V semiconductors during recent years. By critically evaluating the present experimental data and theoretical concepts, we discuss the methods of identification of the types of defects and dopant atoms, the determination of defect energy levels, electrical charge states, as well as lattice relaxation, and the deduction of the physical mechanisms governing the interactions between different defects and/or dopant atoms, the formation of defect complexes, the compensation of dopant atoms, the pinning of the Fermi-level, and the stability of defects. Finally, the methodology to extract the concentrations and types of bulk defects and the physics governing bulk defects is examined.