• Title of article

    Detecting reactive species in hot wire chemical vapor deposition

  • Author/Authors

    Duan، نويسنده , , H.L and Zaharias، نويسنده , , G.A and Bent، نويسنده , , Stacey F، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    7
  • From page
    471
  • To page
    477
  • Abstract
    Major recent advances: A variety of in situ diagnostic techniques have been applied recently to detect reactive species, including H, Si, SiH, SiH2, SiH3 and Si2H6, in hot wire chemical vapor deposition of hydrogenated silicon films. Several recent studies confirmed silicon radicals as a major silane decomposition product from the hot wire. The dependence of silicon production on filament temperature measured in the different studies appears to be similar; however, the reported apparent activation energies vary across research groups.
  • Keywords
    microcrystalline silicon , Gas phase radicals , surfaces , HW-CVD , Single photon ionization , Laser induced fluorescence , cavity ringdown spectroscopy , threshold ionization mass spectrometry , infrared spectroscopy , cat-CVD , amorphous silicon
  • Journal title
    Current Opinion in Solid State and Materials Science
  • Serial Year
    2002
  • Journal title
    Current Opinion in Solid State and Materials Science
  • Record number

    2088811