Title of article
Detecting reactive species in hot wire chemical vapor deposition
Author/Authors
Duan، نويسنده , , H.L and Zaharias، نويسنده , , G.A and Bent، نويسنده , , Stacey F، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
7
From page
471
To page
477
Abstract
Major recent advances: A variety of in situ diagnostic techniques have been applied recently to detect reactive species, including H, Si, SiH, SiH2, SiH3 and Si2H6, in hot wire chemical vapor deposition of hydrogenated silicon films. Several recent studies confirmed silicon radicals as a major silane decomposition product from the hot wire. The dependence of silicon production on filament temperature measured in the different studies appears to be similar; however, the reported apparent activation energies vary across research groups.
Keywords
microcrystalline silicon , Gas phase radicals , surfaces , HW-CVD , Single photon ionization , Laser induced fluorescence , cavity ringdown spectroscopy , threshold ionization mass spectrometry , infrared spectroscopy , cat-CVD , amorphous silicon
Journal title
Current Opinion in Solid State and Materials Science
Serial Year
2002
Journal title
Current Opinion in Solid State and Materials Science
Record number
2088811
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