Electroluminescence in SiOx films and SiOx-film-based systems

This is a short review of the research on the electroluminescence of SiOx (x≤2) film based systems published from January 2001 to February 2003. The goal of these works is the development of the Si-based light emitters, Si-based microelectronic–optoelectronic integration, and the investigation of practical SiOx films using electroluminescent methods. The reviewed systems are classified by the dominant light emission source, as follows: (1) SiOx film defects, (2) rare-earth (RE) molecular centers, (3) monocrystalline silicon substrate, (4) quantum-confined oxide-surrounded Si nanocrystals. The mechanisms of charge injection and transfer, as well as the mechanisms of excitation and emission in various SiOx-based systems are considered. Also discussed is the specifics of the injective and prebreakdown electroluminescence in the particular electroluminescent structure using SiOx-based systems. It is concluded that there is steady progress in research into EL from all of the above structures, and in particular recent progress in light-emitting devices using SiOx films doped with rare earth metals. The most outstanding achievements of the year 2002 are emphasized. The existing problems are analyzed, and the near future development outlook is discussed.