Title of article :
Protonic defect induced carrier doping in TTFCOO−NH4+: Tunable doping level by solvent
Author/Authors :
Terauchi، نويسنده , , Takeshi and Kobayashi، نويسنده , , Yuka and Iwai، نويسنده , , Hideo and Tanaka، نويسنده , , Akihiro، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2012
Pages :
5
From page :
531
To page :
535
Abstract :
The origin of carrier doping in TTFCOO−NH4+ has been verified to include protonic defect in salt bridge by means of X-ray photoelectron spectroscopy (XPS), for the first time. The emergence of spin in TTFCOO−NH4+ is tunable over quite a wide range (9–33%) only by selecting a suitable solvent for the salt crystallization. The spin concentration of the solvent-dependent salts weakly correlates with intensity of optical absorption in near-infrared region, values of g-tensor and dc conductivity at rt. The solvents determining doping level of the salt are classified into three categories by self-dissociation ability (pKSH) of solvent, which likely controls inclusion of protonic defect in the salts.
Keywords :
salt bridge , Carrier doping , charge transport , XPS , Protonic defect
Journal title :
Synthetic Metals
Serial Year :
2012
Journal title :
Synthetic Metals
Record number :
2088884
Link To Document :
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