Title of article :
Photoluminescence of MCM meso-porous materials
Author/Authors :
Shen، نويسنده , , J.L. and Cheng، نويسنده , , C.F.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
7
From page :
427
To page :
433
Abstract :
Different photoluminescence (PL) techniques have been used to study the emission of light from MCM-41 and MCM-48. It was found that the intensity of PL is enhanced after rapid thermal annealing (RTA). This enhancement is explained by the generation of the oxygen-related defects according to the surface properties. Through the analysis of PL with RTA and photoluminescence excitation (PLE), we suggest that the NBOHC and the twofold coordinated silicon centers are responsible for the red and blue–green PL of MCM meso-porous materials, respectively. The PL intensity in MCM meso-porous materials degrades with time during photoexcitation. The dominant mechanism of PL degradation involves the formation of the chemisorbed oxygen-related complexes on the surface, which are adsorbed onto the surface and act as an efficient quencher of PL.
Keywords :
MCM-41 , Photoluminescence , Twofold coordinated Si , Rapid thermal annealing , Photoluminescence degradation , Non-bridging oxygen hole center , MCM-48
Journal title :
Current Opinion in Solid State and Materials Science
Serial Year :
2003
Journal title :
Current Opinion in Solid State and Materials Science
Record number :
2088917
Link To Document :
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